Two new dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs fromSTMicroelectronicssave space and ease circuit design in high-voltage power-conversion and industrial applications.
TheSTGAP2HDfor IGBTs andSTGAP2SICDfor SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions.
The devices can deliver a powerful gate-control signal of up to 4A, with dual output pins for extra flexibility in gate driving, allowing independent adjustment of turn-on and turn-off times. The active Miller clamp prevents gate spikes during fast commutation in half-bridge topologies.
电路保护功能包括热布鲁泰克tion, a watchdog for safe operation, and under-voltage lockout (UVLO) per channel to prevent starting-up in a dangerous low-efficiency mode. The STGAP2SICD has a raised UVLO threshold voltage optimized for the needs of SiC MOSFETs.
Each device has an iLOCK pin for turning on both channels simultaneously in dual low-side and asymmetrical half-bridge applications. There is also interlocking to prevent shoot-through currents in conventional half-bridge circuits. Both drivers are rated for voltages up to 1200V on the high-voltage rail and have input-to-output propagation time of 75ns with high PWM accuracy.
With dedicated shutdown and brake pins, and a standby pin for power saving, ST’s new dual-channel galvanically-isolated gate drivers target applications including power supplies, drives, inverters, welders, and chargers. In addition, input pins compatible with TTL and CMOS logic down to 3.3V simplify connection to a host microcontroller or DSP.
Filed Under:118金宝搏抽水 ,168博金宝 ,Power Management
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